Transistors
2SC5556
Silicon
NPN epitaxial planar type
For UHF band low-noise amplification
Unit: mm
■ Features • Low noise figure NF
0.
40+–00.
.
0150 3
0.
16+–00.
.
0160
1.
50–+00.
.
0255 2.
8–+00.
.
32
• High transition frequency fT
0.
4±0.
2
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
1
2
packing
(0.
95) (0.
95)
5˚
(0.
65)
1.
9±0.
1
/ ■ Absolute Maximum Ratings Ta = 25°C
2.
90+–00.
.
0250
10˚
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
15
V
c e.
d ty Collector-emitter voltage (Base open) VCEO
10
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
2
0 to 0.
1 1...