Transistor
2SC5557
Silicon
NPN epitaxial planar type
For low-noise RF amplifier
0.
33+–00.
.
0025
Unit: mm
0.
10+–00.
.
0025
3
0.
15 min.
0.
80±0.
05 1.
20±0.
05
I Features
• High transition frequency fT
5˚
• High gain of 8.
2 dB and low noise of 1.
8 dB at 3 V
0.
23+–00.
.
0025
12
0.
15 min.
• Optimum for RF amplification of a portable telephone and pager
(0.
40) (0.
40) 0.
80±0.
05 1.
20±0.
05
I Absolute Maximum Ratings Ta = 25°C
5˚
Parameter
Symbol Rating
Unit
/ Collector to base voltage
VCBO
9
V
0 to 0.
01 0.
52±0.
03
0.
15 max.
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