isc P-Channel MOSFET
Transistor
RD3H045SP
FEATURES ·Drain Current –ID= -4.
5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= -45V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 155mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
-45
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
-4.
5
A
IDM
Drain Current-Single Pluse
-9
A
PD
Total Dissipation @TC=25℃
15
W
TJ
Max.
Operating Junction Temperature
150
℃
...