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SEMiX151GB17E4s

Part Number SEMiX151GB17E4s
Manufacturer Semikron
Description IGBT
Published Mar 22, 2021
Detailed Description SEMiX151GB17E4s SEMiX® 1s SEMiX151GB17E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with po...
Datasheet SEMiX151GB17E4s




Overview
SEMiX151GB17E4s SEMiX® 1s SEMiX151GB17E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no.
E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125 °C max.
• Product reliability results are valid for Tj=150 °C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 3xICnom VGES tpsc Tj VCC = 1000 V VGE ≤ 15 V VCES ≤ 1700 V Tj = 150 °C Inverse diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM...






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