CGHV1J070D
70 W, 18.
0 GHz, GaN HEMT Die
Description
Cree’s CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) on a silicon carbide substrate, using a 0.
25 μm gate length fabrication process.
This GaN-on-SiC product offers superior high frequency, high efficiency features.
It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
PN: CGHV1J070D
Features
• 17 dB Typ.
Small Signal Gain at 10 GHz
• 60% Typ.
PAE at 10 GHz
• •
70 W Typical PSAT 40 V Operation
• Up to 18 GHz Operation
Applications • Satellite Communications • PTP Communications Links • Marine Radar • Pleasure Craft Radar • Port V...