CGHV96130F
130 W, 8.
4 - 9.
6 GHz, 50-ohm, Input/Output Matched GaN HEMT
Description
Cree’s CGHV96130F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) on Silicon Carbide (SiC) substrates.
This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies.
GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs
transistors.
This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.
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