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VSZ160N10MS

Part Number VSZ160N10MS
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Apr 12, 2021
Detailed Description Features  Enhancement mode  Fast Switching and High efficiency  Pb-free lead plating; RoHS compliant VSZ160N10MS 100...
Datasheet VSZ160N10MS




Overview
Features  Enhancement mode  Fast Switching and High efficiency  Pb-free lead plating; RoHS compliant VSZ160N10MS 100V/3A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.
5 V ID 100 V 135 mΩ 150 mΩ 3 A SOT223 Part ID VSZ160N10MS Package Type SOT223 Marking 160N10M Tape and reel information 2500PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① PD TSTG , TJ Maximum power dissipation Storage and junction temperature range Thermal Chara...






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