P-Channel Enhancement Mode Power MOSFET Description The HM70P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .
This device is well suited for high current load applications.
General Features ● VDS =-40V,ID =-70A RDS(ON) 10mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switch ● Load switch in high current applications ● DC/DC converters HM70P04 Schematic diagram HM70P04 Marking and pin assignment 100% UIS TESTED! 100...

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