P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM25P03K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.
5V.
GENERAL FEATURES ● VDS = -30V,ID = -25A RDS(ON) 35mΩ @ VGS=-4.
5V RDS(ON) 20mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●Battery Switch ●Load switch ●Power management HM25P03K D G S Schematic diagram HM25P03K Marking and pin assignment TO-252-2L top view Package Marking And Ordering Information Device Marking Device Device Package HM25P03K HM25P03K TO-252-2L Reel Size Ø330mm Tape width 12mm Quantity 2500 unit...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)