HM3305 N-Channel Enhancement Mode Power MOSFET Description The HM3305 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =60V,ID =150A RDS(ON) 4.
5mΩ @ VGS=10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability HM3305 Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100...

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