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Part Number
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NTBG060N090SC1 |
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Manufacturer
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ON Semiconductor |
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Description
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SiC MOSFET |
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Published
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Apr 30, 2021 |
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Detailed Description
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DATA SHEET www.onsemi.com
Silicon Carbide (SiC) MOSFET – EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L
NTBG060N090SC1
Featur...
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Datasheet
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NTBG060N090SC1
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Overview
DATA SHEET www.
onsemi.
com
Silicon Carbide (SiC) MOSFET – EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L
NTBG060N090SC1
Features
• Typ.
RDS(on) = 60 mW @ VGS = 15 V • Typ.
RDS(on) = 43 mW @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 88 nC) • High Speed Switching with Low Capacitance (Coss = 115 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
• UPS • DC-DC Converter • Boost Inverter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
900
V
Gate−to−Source Voltage
Recommended Operation Values of Gate−to−Source...
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