isc N-Channel MOSFET
Transistor
FEATURES ·Drain Current –ID= 70A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 150V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 28mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
150
V
±25
V
ID
Drain Current-Continuous
70
A
IDM
Drain Current-Single Pluse
280
A
PD
Total Dissipation @TC=25℃
330
W
TJ
Max.
Operating Junction Temperature -55~175 ℃
Tstg
Storage...