FDS8880

FDS8880 : This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed. Applications DC/DC converters www.DataSheet4U.com Branding Dash 5 5 4 3 2 1 6 7 1 2 3 4 8 SO-8 ©2005 Fairchild Semiconductor Corporation FDS8880 Rev. A1 1 www.fairchildsemi.com FDS8880 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TA = 25oC, VGS = 10V, R θJA = 50oC/W) Continuous (TA = 2.

FDS8880 : Freescale N-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits FDS8880/ MC8880 VDS (V) 30 PRODUCT SUMMARY rDS(on) (mΩ) 11 @ VGS = 10V 12 @ VGS = 4.5V ID(A) 16.8 16.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 16.8 14.2 100 5.1 Power Dissipation a TA=25°C TA=70°C PD 3.1 2.2 Operatin.

FDS8882 : „ Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 9 A „ Max rDS(on) = 22.5 mΩ at VGS = 4.5 V, ID = 8 A „ High performance trench technology for extremely low rDS(on) and fast switching „ High power and current handling capability „ Termination is Lead-free and RoHS Compliant The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. Applications „ Notebook System Regulators „ DC/DC Converters D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID.

FDS8884 : This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. A REE I DF Features „ Max rDS(on) = 23mΩ at VGS = 10V, ID = 8.5A „ Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.5A „ Low gate charge „ 100% RG Tested „ RoHS Compliant M ENTATIO LE N MP LE D D D D www.DataSheet4U.com 5 6 7 8 4 3 2 1 SO-8 S S S G MOSFET Maximum Ratings Symbol VDS VGS ID EAS PD TJ, TSTG Drain to Source Voltage Gate to Source Voltage Drain Current Continuous Pulsed TA = 25°C unless otherwise noted Parameter Ratings.

FDS8884 : This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. AD FREE I Features „ Max rDS(on) = 23mΩ at VGS = 10V, ID = 8.5A „ Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.5A „ Low gate charge „ 100% RG Tested „ RoHS Compliant D D D D 5 4 6 3 SO-8 G SS S 7 2 8 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage Drain Current Continuous ID Pulsed (Note 1a) EAS Single Pulse Avalanche Energy Power dissip.