IPP045N10N3G
MOSFET
OptiMOSª3Power-
Transistor,100V
Features
•N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
100
V
RDS(on),max
4.
5
mΩ
ID
137
A
TO-220-3
tab
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPP045N10N3 G
Package PG-TO 220-3
Marking 045N10N
RelatedLinks -
1) J-STD20 and JESD22
Final Da...