MRF151A
RF Power Field-Effect
Transistor 150W, 50V, 175MHz N-Channel Broadband MOSFET
Features
Enhanced thermal performance Higher power dissipation Guaranteed Performance at 30 MHz, 50 V: Output Power — 150 W Gain — 18 dB (22 dB Typ) Efficiency — 40% Typical Performance at 175 MHz, 50 V: Output Power — 150 W Gain — 13 dB Low Thermal Resistance Ruggedness Tested at Rated Output Power Nitride Passivated Die for Enhanced Reliability
Package Outline
Description and Applications
Designed for broadband commercial and military applications at frequencies to 175 MHz.
The high power, high gain and broadband performance of this device makes possible solid state transmitters fo...