MOSFET – Power, N-Channel, UltraFET
55 V, 75 A, 7 mW
HUF75345G3, HUF75345P3, HUF75345S3S
Description These N−Channel power MOSFETs are manufactured using
the innovative UltraFET process.
This advanced process technology achieves the lowest possible on−resistance per silicon area, resulting in outstanding performance.
This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
It was designed for use in applications where power efficiency is important, such as switching
regulators, switching converters, motor drivers, relay drivers, low−voltage bus switches, and power management in portable and battery−oper...