MOSFET
H5N5016PL-E0-E 500V - 50A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.108 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching • Built-in fast recovery diode • Quality grade: Standard Outline RENESAS Package code: PRSS0003ZN-A, PRSS0003ZC-A (Package name:TO-264A, TO-264) D Datasheet R07D...
Renesas