FDC606P FDC606P P-Channel 1.
8V Specified PowerTrench MOSFET General Description This P-Channel 1.
8V specified MOSFET uses ON Semiconductor’s low voltage PowerTrench process.
It has been optimized for battery power management applications.
Applications • Battery management • Load switch • Battery protection Features • –6 A, –12 V.
RDS(ON) = 26 mΩ @ VGS = –4.
5 V RDS(ON) = 35 mΩ @ VGS = –2.
5 V RDS(ON) = 53 mΩ @ VGS = –1.
8 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) S D D SuperSOT TM-6 G DD 1 6 2 5 3 4 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain...

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