isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1300V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1300
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
5
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
20
A
60
W
150
℃
Tstg
Storage Temperatur...