BSC005N03LS5
MOSFET
OptiMOSTM5Power-
Transistor,30V
Features
•Verylowon-resistanceRDS(on)@VGS=4.
5V •Optimizedchargesforfastswitching •OptimizedQGD/QGSforinducedturnonruggedness •Superiorthermalresistance •N-channel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
30
V
RDS(on),max
0.
55
mΩ
ID
433
A
Qoss
70
nC
QG(0V.
.
4.
5V)
59
nC
PG-TDSON-8
8 7
6
5
5 6
7
8
Pin 1
2 3 4
4 3 2 1
Drain Pin 5-8
Gate
*1
Pin 4
Source *1: Internal body diode Pin 1-3
...