isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Collector Current:: IC= 2.
0A ·Low Collector Saturation Voltage
: VCE(sat)= 1.
0V(Max)@IC= 500mA ·Complement to Type 2SB1096 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power supplies or a variety of drives in audio
and other equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
200
V
VCEO Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
5.
0
V
IC
Collector Current-Continuous
2.
0
A
ICM
Collector Current-Peak
3.
0
A
IB
Base Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Tempera...