isc Silicon
NPN Power
Transistor
DESCRIPTION ·With TO-3 packaging ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=15(Min)@IC = 2.
5A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
0V(Max)@ IC = 2.
5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6.
0
V
IC
Collector Current-Continuous
5.
0
A
PD
Total Power Dissipation@TC=75℃
50
W
TJ
Max.
Junction Temperature
150
℃
Tstg
Storage Tempe...