isc N-Channel MOSFET
Transistor
·DESCRIPTION ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 110V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·General purpose power amplifier
·ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
110
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
18
A
ID(puls)
Pulse Drain Current
72
A
Ptot
Total Dissipation@TC=25℃
79
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
...