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Part Number
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SW055R68E7T |
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Manufacturer
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Samwin |
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Description
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N-channel MOSFET |
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Published
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Aug 7, 2022 |
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Detailed Description
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SW055R68E7T
Features
N-channel Enhanced mode TO-220/TO-263 MOSFET
High ruggedness Low RDS(ON) (Typ 5.6mΩ)@VGS=10V...
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Datasheet
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SW055R68E7T
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Overview
SW055R68E7T
Features
N-channel Enhanced mode TO-220/TO-263 MOSFET
High ruggedness Low RDS(ON) (Typ 5.
6mΩ)@VGS=10V Low Gate Charge (Typ 94nC) Improved dv/dt Capability 100% Avalanche Tested Application:Synchronous Rectification,
Li Battery Protect Board, Inverter
TO-220
TO-263
12 3
12 3
General Description
1.
Gate 2.
Drain 3.
Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
BVDSS : 68V
ID
: 110A
RDS(ON) : 5.
6mΩ
2
1 3
Order Codes
Item
Sales Type
Marking
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