isc Silicon
NPN Power
Transistor
DESCRIPTION ·High DC Current Gain
: hFE= 10(MAX)@IC= 1.
5A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as an output device in complementary
audio amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCEO Collector-Emitter Voltage
70
V
VEBO
Emitter-Base Voltage
1
V
IC
Collector Current-Continuous
5.
0
A
PC
Collector Power Dissipation@TC=75℃
40
W
TJ
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-55-175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 1.
25
UN...