6-Pin DIP High BVCEO Photo
transistor Optocouplers
CNY17 Series, MOC8106M
Description The CNY17XM, CNY17FXM, and MOC8106M devices consist of
a gallium arsenide infrared emitting diode coupled with an
NPN photo
transistor in a dual in−line package.
Features
High BVCEO: 70 V Minimum
(CNY17XM, CNY17FXM, MOC8106M)
Closely Matched Current Transfer Ratio (CTR) Minimizes
Unit−to−Unit Variation
Current Transfer Ratio In Select Groups Very Low Coupled Capacitance Along With
No Chip−to−Pin 6 Base Connection for Minimum Noise Susceptibility (CNY17FXM, MOC8106M)
Safety and
Regulatory Approvals:
UL1577, 4,170 VACRMS for 1 Minute DIN−EN/IEC60747−5−5, 850 V Peak Working
Insulation Voltage
Appli...