NGTB15N120IHWG
Product Preview IGBT
This Insulated Gate Bipolar
Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss.
The IGBT is well suited for resonant or soft switching applications.
Features
• Extremely Efficient Trench with Fieldstop Technology • Low Switching Loss Reduces System Power Dissipation • Optimized for Low Losses in IH Cooker Application • This is a Pb−Free Device
Typical Applications
• Inductive Heating • Consumer Appliances • Soft Switching
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