NGTB40N120S3WG
IGBT - Ultra Field Stop
This Insulated Gate Bipolar
Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering low switching losses.
The IGBT is well suited for applications that require fast switching IGBT with low VF diodes, e.
g.
phase−shifted full bridge, etc.
Incorporated into the device is a free wheeling diode with a low forward voltage.
Features
• Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C • Low VF Reverse Diode • Optimized for High Speed Switching • These are Pb−Free Devices
Typical Applications
• Welding • Uninterruptible Pow...