| Part Number | FGHL75T65LQDT |
| Manufacturer | ON Semiconductor |
| Title | IGBT |
| Description | Field stop 4th generation Low Vce(sat) IGBT technology and Full current rated copak Diode technology. Features • Maximum Junction Temperature: TJ ... |
| Features |
• Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.15 V (Typ.) @ IC = 75 A • 100% Of The Part Are Tested For ILM (Note 2) • Smooth & Optimized Switching • Tight Parameter Distribu... |
| File Size | 336.24KB |
| Datasheet |
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FGHL75T65LQDTL4 : Field stop 4th generation Low VCE(sat) IGBT technology and Full current rated copack Diode technology. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.15 V (Typ.) @ IC = 75 A • 100% of the Part are Tested for ILM (Note 2) • Smooth & Optimized Switching • Tight Parameter Distribution • Co−Packed with Soft and Fast Recovery Diode • RoHS Compliant Typical Applications • Solar Inverter • UPS, ESS • PFC, Converters MAXIMUM RATINGS Rating Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage Collector Current @ TC = 25°C (Note 1) Co.