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HGTG30N60C3D

Part Number HGTG30N60C3D
Manufacturer ON Semiconductor
Title N-Channel IGBT
Description UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 63 A, 600 V HGTG30N60C3D The HGTG30N60...
Features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on−state conduction ...
Published Oct 3, 2022
Datasheet HGTG30N60C3D PDF File




Features
of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is...






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