DatasheetsPDF.com

MHT1008N

Part Number MHT1008N
Manufacturer NXP
Description RF Power LDMOS Transistor
Published Dec 17, 2022
Datasheet MHT1008N




Features
 Characterized with series equivalent large--signal impedance parameters and common source S--parameters  Qualified for operation at 32 Vdc  Integrated ESD protection  150C case operating temperature  150C die temperature capability Target App...






Similar Datasheet






Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)