LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier
Transistor
z Features 1.
High transition frequency.
(Typ.
fT=3.
2GHz) 2.
Small rbb`Cc and high gain.
(Typ.
4ps)
3.
Small NF.
4.
We declare that the material of product compliance with RoHS requirements.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
20
V
Collector-Emitter Voltage
VCEO
11
V
Emitter-base voltage
VEBO
3
V
Collector Current
IC
50
mA
Collector power dissipation
PC
0.
2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55~+150
°C
DEVICE MARKING L2SC3838NLT1G=APN
z ORDERING INFORMATION
Device L2SC3838NLT1G L2SC3838NLT3G
Package SOT-23...