Part Number
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FDD3510H |
Manufacturer
|
ON Semiconductor |
Description
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Dual N & P-Channel Power MOSFET |
Published
|
Jan 23, 2023 |
Detailed Description
|
FDD3510H Dual N & P-Channel PowerTrench ® MOSFET
FDD3510H
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 80V, 13.9A,...
|
Datasheet
|
FDD3510H
|
Overview
FDD3510H Dual N & P-Channel PowerTrench ® MOSFET
FDD3510H
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 80V, 13.
9A, 80mΩ P-Channel: -80V, -9.
4A, 190mΩ
Features
Q1: N-Channel Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.
3A Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.
1A
Q2: P-Channel Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.
8A Max rDS(on) = 224mΩ at VGS = -4.
5V, ID = -2.
6A 100% UIL Tested RoHS Compliant
General Description
These dual N and P- Channel enhancement mode Power MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on -state resistance and yet maintain superior switching performance.
Applications
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