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NTBS2D7N06M7

N-Channel Power MOSFET

Description

NTBS2D7N06M7 N‐Channel PowerTrench) MOSFET 60 V, 110 A, 2.7 mW Features • Typical RDS(on) = 2.2 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) = 80 nC at VGS = 10 V, ID = 80 A • UIS Capability • These Devices are Pb−Free and are RoHS Compliant Applications • Industrial Motor Drive • Industrial Power Supply • Industrial Automation • Battery Operated Tools •...


ON Semiconductor

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