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Part Number
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FDMD8900 |
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Manufacturer
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ON Semiconductor |
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Description
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N-Channel Power MOSFET |
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Published
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Jan 23, 2023 |
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Detailed Description
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MOSFET, N-Channel, POWERTRENCH)
Q1: 30 V, 66 A, 4 mW Q2: 30 V, 42 A, 5.5 mW
FDMD8900
General Description This devices u...
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Datasheet
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FDMD8900
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Overview
MOSFET, N-Channel, POWERTRENCH)
Q1: 30 V, 66 A, 4 mW Q2: 30 V, 42 A, 5.
5 mW
FDMD8900
General Description This devices utilizes two optimized N−ch FETs in a dual 3.
3 x 5 mm
thermally enhanced power package.
The HS Source and LS drain are internally connected providing a low source inductance package, helping to provide the best FOM.
Features
Q1: N−Channel
• Max rDS(on) = 4 mW at VGS = 10 V, ID = 19 A • Max rDS(on) = 5 mW at VGS = 4.
5 V, ID = 17 A • Max rDS(on) = 6.
5 mW at VGS = 3.
8 V, ID = 15 A • Max rDS(on) = 8.
3 mW at VGS = 3.
5 V, ID = 14 A
Q2: N−Channel
• Max rDS(on) = 5.
5 mW at VGS = 10 V, ID = 17 A • Max rDS(on) = 6.
5 mW at VGS = 4.
5 V, ID = 15 A • Max rDS(on) = 9 mW at VGS = 3.
8 V, ID ...
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