MOSFET - Power, Single N-Channel 40 V, 4.
3 mW, 85 A NVTYS004N04CL Features • Small Footprint (3.
3 x 3.
3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 2, 3, 4) TC = 25°C ID Steady TC = 100°C Power Dissipation State TC = 25°C PD RqJC (Notes 1, 2, 3) TC = 100°C 84 A 59 55 W 27 Continuous Drain Current RqJA (Notes 1, 3, 4) Power Dissi...

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