Part Number
|
NVMYS029N08LH |
Manufacturer
|
ON Semiconductor |
Description
|
N-Channel Power MOSFET |
Published
|
Jan 23, 2023 |
Detailed Description
|
MOSFET - Power, Single N-Channel
80 V, 29 mW, 22 A
NVMYS029N08LH
Features
• Small Footprint (5x6 mm) for Compact Desig...
|
Datasheet
|
NVMYS029N08LH
|
Overview
MOSFET - Power, Single N-Channel
80 V, 29 mW, 22 A
NVMYS029N08LH
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard
• AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
80
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 3)
Steady TC = 25°C
ID
State
TC = 100°C
22
A
15
Power Dissipation RqJC (Note 1)
TC = 25°C
PD
TC = 100°C
33
W
17
Continuous Drain Current RqJA (No...
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