DATA SHEET www.
onsemi.
com MOSFET - Power, Dual N-Channel 100 V, 26 mW, 28 A NVMFD027N10MCL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • NVMFWD027N10MCL − Wettable Flank Products • These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage VGS ±20 V Continuous Drain TC = 25°C ID Current RqJC (Note 1) Steady TC = 100°C Power Dissipation RqJC (Note 1) State TC = 25°C PD...

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