Part Number
|
NVTFS6H860N |
Manufacturer
|
ON Semiconductor |
Description
|
N-Channel Power MOSFET |
Published
|
Jan 24, 2023 |
Detailed Description
|
MOSFET - Power, Single, N-Channel
80 V, 21.1 mW, 33 A
NVTFS6H860N
Features
• Small Footprint (3.3 x 3.3 mm) for Compact...
|
Datasheet
|
NVTFS6H860N
|
Overview
MOSFET - Power, Single, N-Channel
80 V, 21.
1 mW, 33 A
NVTFS6H860N
Features
• Small Footprint (3.
3 x 3.
3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H860NWF − Wettable Flanks Product
• AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
80
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 2, 3, 4)
TC = 25°C
ID
Steady TC = 100°C
Power Dissipation
State TC = 25°C
PD
RqJC (Notes 1, 2, 3)
TC = 100°C
30
A
21
46
W
23
Continuous Drai...
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