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Part Number
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NVH4L060N065SC1 |
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Manufacturer
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ON Semiconductor |
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Description
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SiC MOSFET |
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Published
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Jan 24, 2023 |
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Detailed Description
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MOSFET - SiC Power, Single N-Channel, TO247-4L
650 V, 44 mW, 47 A
NVH4L060N065SC1
Features
• Typ. RDS(on) = 44 mW @ VG...
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Datasheet
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NVH4L060N065SC1
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Overview
MOSFET - SiC Power, Single N-Channel, TO247-4L
650 V, 44 mW, 47 A
NVH4L060N065SC1
Features
• Typ.
RDS(on) = 44 mW @ VGS = 18 V
Typ.
RDS(on) = 60 mW @ VGS = 15 V
• Ultra Low Gate Charge (QG(tot) = 74 nC) • Low Capacitance (Coss = 133 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Pb−Free and is RoHS Compliant
Typical Applications
• Automotive On Board Charger • Automotive DC/DC Converter for EV/HEV
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
650
V
Gate−to−Source Voltage
VGS −8/+22 V
Recommended Operation Values TC 175°C VGSop −5/+18 V of Gate−to−Source Voltage
Continuous Drain Cu...
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