MOSFET - Power, Single N-Channel 80 V, 21.
1 mW, 33 A NTTFS6H860N Features • Small Footprint (3.
3 x 3.
3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V Continuous Drain TC = 25°C ID Current RqJC (Notes 1, 2, 3, 4) Steady TC = 100°C Power Dissipation State TC = 25°C PD RqJC (Notes 1, 2, 3) TC = 100°C 30 A 21 46 W 23 Continuous Drain Current RqJA (Notes 1, 3, 4) Power Dissipation RqJA (Notes 1, 3) TA = 25°C ...

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