NTMFS10N3D2C MOSFET – Power Trench, N‐Channel, Shielded Gate 100 V, 151 A, 3.
2 mW General Description This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology.
This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Features • Shielded Gate MOSFET Technology • Max rDS(on) = 3.
2 mW at VGS = 10 V, ID = 67 A • Max rDS(on) = 9 mW at VGS = 6 V, ID = 33 A • 50% Lower Qrr than Other MOSFET Suppliers • Lowers Switching Noise/EMI • MSL1 Robust Package Design • 100% UIL Tested • These Devices are Pb−Free and are RoHS Compliant Applica...

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