NTMFD5877NL MOSFET – Power, Dual, N-Channel, Logic Level, Dual SO8FL 60 V, 39 mW, 17 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) for Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS "20 V Continuous Drain Cur- Tmb = 25°C ID rent RYJ−mb (Notes 1, 2, 3, 4) Steady Tmb = 100°C Power Dissipation State Tmb = 25°C PD RYJ−mb (Notes 1, 2, 3) Tmb = 100°C 17 A 12 23 W 12 Continuous Drain Cur- TA = 25°C ID rent RqJ...

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