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Single Channel, DC Sensing Input, Photo
transistor Optocoupler In Half-Pitch Mini-Flat 4-Pin Package
FODM291 Series
The FODM291 series consist of a gallium arsenide infrared emitting diode driving a photo
transistor.
It built in a compact, half−pitch, mini−flat, 4−pin package.
The lead pitch is 1.
27 mm.
Features
• Current Transfer Ratio Ranges from 80 to 600%
at IF = 5 mA, VCE = 5 V, TA = 25°C ♦ FODM291A − 80 to 160% ♦ FODM291B − 130 to 260% ♦ FODM291C − 200 to 400% ♦ FODM291D − 300 to 600%
• Safety and
Regulatory Approvals:
♦ UL1577, 3750 VACRMS for 1 min ♦ DIN EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage
(Pending)
• Applicable to Infrared Ray Reflow, 260°...