NTJD4152P, NVJD4152P MOSFET – Dual, P-Channel, Trench Small Signal, ESD Protected, SC-88 20 V, 0.
88 A Features • Leading Trench Technology for Low RDS(ON) Performance • Small Footprint Package (SC70−6 Equivalent) • ESD Protected Gate • NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These are Pb−Free Devices Applications • Load/Power Management • Charging Circuits • Load Switching • Cell Phones, Computing, Digital Cameras, MP3s and PDAs MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±12 V Conti...

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