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NTH4L022N120M3S

Part Number NTH4L022N120M3S
Manufacturer ON Semiconductor
Title SiC MOSFET
Description DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L ...
Features • Typ. RDS(on) = 22 mW @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 137 nC) • High Speed Switching with Low Capacitan...
Published Feb 16, 2023
Datasheet NTH4L022N120M3S PDF File




Features

• Typ. RDS(on) = 22 mW @ VGS = 18 V
• Ultra Low Gate Charge (QG(tot) = 137 nC)
• High Speed Switching with Low Capacitance (Coss = 146 pF)
• 100% Avalanche Tested
• This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on Seco...






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