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Part Number
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STB30N65DM6AG |
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Manufacturer
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STMicroelectronics |
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Description
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Automotive-grade N-channel Power MOSFET |
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Published
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Mar 1, 2023 |
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Detailed Description
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STB30N65DM6AG
Datasheet
Automotive-grade N-channel 650 V, 102 mΩ typ., 28 A MDmesh DM6 Power MOSFET in a D²PAK package
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Datasheet
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STB30N65DM6AG
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Overview
STB30N65DM6AG
Datasheet
Automotive-grade N-channel 650 V, 102 mΩ typ.
, 28 A MDmesh DM6 Power MOSFET in a D²PAK package
TAB 2 3 1
D²PAK
D(2, TAB)
G(1)
S(3)
AM01476v1_tab
Features
Order code STB30N65DM6AG
VDS 650 V
RDS(on) max.
115 mΩ
ID 28 A
• AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected
Applications
• Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.
Compared with the previous MDmesh fast generation, DM6 combines very low recovery c...
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