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Part Number
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SCT011H75G3AG |
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Manufacturer
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STMicroelectronics |
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Description
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Automotive-grade silicon carbide Power MOSFET |
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Published
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Mar 1, 2023 |
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Detailed Description
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SCT011H75G3AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an H²PAK-7 package
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Datasheet
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SCT011H75G3AG
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Overview
SCT011H75G3AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 750 V, 11.
4 mΩ typ.
, 110 A in an H²PAK-7 package
TAB
7 1 H2PAK-7
Drain (TAB)
Features
Order code SCT011H75G3AG
VDS 750 V
RDS(on) typ.
11.
4 mΩ
• AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency
ID 110 A
Gate (1) Driver source (2)
Power source (3, 4, 5, 6, 7)
N-chG1DS2PS34567DTAB
Applications
• Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC)
Description
This silicon carbide Power MOSFET device has been developed using ST’s advance...
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