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Part Number
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SCTH100N120G2-AG |
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Manufacturer
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STMicroelectronics |
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Description
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Automotive-grade silicon carbide Power MOSFET |
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Published
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Mar 1, 2023 |
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Detailed Description
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SCTH100N120G2-AG
Datasheet
Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H...
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Datasheet
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SCTH100N120G2-AG
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Overview
SCTH100N120G2-AG
Datasheet
Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ.
, TJ = 25 °C) in an H2PAK-7 package
TAB
7 1 H2PAK-7
Drain (TAB)
Gate (1) Driver source (2)
Power source (3, 4, 5, 6, 7)
N-chG1DS2PS34567DTAB
Features
Order code SCTH100N120G2-AG
VDS 1200 V
RDS(on)typ.
30 mΩ
ID 75 A
• AEC-Q101 qualified • High speed switching performance • Very fast and robust intrinsic body diode • Low capacitance
Applications
• Traction inverters • DC-DC converters • Solar inverters • OBC
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.
The device features remarkably low on-...
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