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Part Number
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SCTW100N120G2AG |
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Manufacturer
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STMicroelectronics |
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Description
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Automotive-grade silicon carbide Power MOSFET |
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Published
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Mar 1, 2023 |
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Detailed Description
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SCTW100N120G2AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mΩ (typ., TJ=25 °C), in an HiP2...
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Datasheet
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SCTW100N120G2AG
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Overview
SCTW100N120G2AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mΩ (typ.
, TJ=25 °C), in an HiP247 package
Features
Order code SCTW100N120G2AG
VDS 1200 V
RDS(on)typ.
30 mΩ
ID 75 A
HiP247
D(2, TAB)
G(1) S(3)
3 2 1
• AEC-Q101 qualified • High speed switching performance • Very fast and robust intrinsic body diode • Low capacitances • Very high operating junction temperature capability (TJ = 200 °C)
Applications
• Traction for inverters • DC-DC converters • Solar inverters • OBC
AM01475v1_noZen
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.
The device features rema...
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